The Optical Properties of InGaN/GaN Nanorods Fabricated on (-201) β-Ga2O3 Substrate for Vertical Light Emitting Diodes
نویسندگان
چکیده
We fabricated InGaN/GaN nanorod light emitting diode (LED) on (-201) β-Ga2O3 substrate via the SiO2 nanosphere lithography and dry-etching techniques. The LED grown can effectively suppress quantum confined Stark effect (QCSE) compared to planar account of strain relaxation. With enhancement excitation power density, photoluminescence (PL) peak shows a large blue-shift for LED, while position shift is small. Furthermore, simulations also show that extraction efficiency (LEE) approximately seven times as high LED. Obviously, InGaN/GaN/β-Ga2O3 conducive improving optical performance relative present work may lay groundwork future development GaN-based vertical diodes (VLEDs) substrate.
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ژورنال
عنوان ژورنال: Photonics
سال: 2021
ISSN: ['2304-6732']
DOI: https://doi.org/10.3390/photonics8020042